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991.
In this study, distribution and history of residual stresses in plaque-like geometries are simulated based on linear thermoviscoelastic
model, which helps to understand the mechanics and evolution of the residual stresses in the injection molding process. The
numerical calculation of direction, combined with the specified boundary conditions. Results show that the stress variation
across the thickness exhibits a high surface tensile value changing to a compressive peak value close to the surface, with
the core region experiencing a parabolic tensile peak. Residual stress distribution throughout the thickness is almost same
along the flowpath and the final residual stresses value near the gate is lower than the value near the end of flowpath. 相似文献
992.
Yu Yang Hugo Bender Kai Arstila Bart Swinnen Bert Verlinden Ingrid De Wolf 《Microelectronics Reliability》2008,48(8-9):1517-1520
Focused ion beam (FIB) and nano-probing were applied for failure analysis of three-dimensional stacked circuits with copper through-silicon-vias between the stacked chips. The failure analysis was done after high temperature storage and thermal cycling tests. Passive voltage contrast in FIB allowed to pinpoint the open sites. FIB cross-sections showed the presence of opens at the bottom of the copper vias. The failure cause was suspected to be an interlayer particle, which was confirmed by optical profilometry. Nano-probing was used on another sample to pinpoint the failure location through the measurement of the local resistance within the daisy chains. The failure was traced out to be related with surface contamination. 相似文献
993.
994.
995.
D. D. Avrov S. I. Dorozhkin Yu. M. Tairov A. Yu. Fadeev A. O. Lebedev 《Semiconductors》2008,42(13):1469-1474
The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings. 相似文献
996.
Xiaoming Zhou Martin Jacobsson Henk Uijterwaal Piet Van Mieghem 《International Journal of Communication Systems》2008,21(6):643-663
Although packet delay and loss are two important parameters of the Internet performance, to the best of our knowledge, the evolution of large‐scale IPv6 delay and loss performance has previously not been studied. In this paper, we analyze more than 600 end‐to‐end IPv6 paths between about 26 testboxes of RIPE Network Coordination Centre over two years, and compare the delay and loss performance over time with their IPv4 counterparts. We present and discuss the measurement methodologies and show that IPv6 paths have a higher delay and loss than their IPv4 counterparts. The main reason for the worse performance stems from IPv6‐in‐IPv4 tunnels rather than from native IPv6 paths and such tunnels are still widely used today. Copyright © 2007 John Wiley & Sons, Ltd. 相似文献
997.
Removing noise from audio signals requires a nondiagonal processing of time-frequency coefficients to avoid producing ldquomusical noise.rdquo State of the art algorithms perform a parameterized filtering of spectrogram coefficients with empirically fixed parameters. A block thresholding estimation procedure is introduced, which adjusts all parameters adaptively to signal property by minimizing a Stein estimation of the risk. Numerical experiments demonstrate the performance and robustness of this procedure through objective and subjective evaluations. 相似文献
998.
周阳 《消防技术与产品信息》2007,(1):67-68,55
大约在汽车出现的时代,泡沫就被引入到消防设备。它的出现是为了适应控制和扑灭比水轻且不溶于水的液体所引发火灾的需要,比如为汽车添加的燃料。随着汽车数量的增加,燃料的社会储备量也随之增加,可想而知,包括挥发性有机液体(大部分是碳氢化合物)的火灾数量也会不断上升。早期 相似文献
999.
1000.
A. D. Bulanov P. G. Sennikov V. A. Krylov T. G. Sorochkina L. A. Chuprov O. Yu. Chernova O. Yu. Troshin 《Inorganic Materials》2007,43(4):364-368
Using gas chromatography and high-resolution Fourier-transform IR spectroscopy, we have determined the concentrations of C1–C4 hydrocarbon impurities in isotopically unmodified silicon tetrafluoride before and after fine purification and in 28Si-enriched SiF4. The concentrations of C1–C4 hydrocarbon impurities in silicon tetrafluoride for SiH4 synthesis have been shown to correlate with those in the synthesized silane. 相似文献